
Discrete Semiconductor Products
2SA1008-AZ
ActiveRenesas Electronics Corporation
BIPOLAR POWER TRANSISTORS
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Documents2SA1008 Data Sheet (D14866EJ2V0DS00)

Discrete Semiconductor Products
2SA1008-AZ
ActiveRenesas Electronics Corporation
BIPOLAR POWER TRANSISTORS
Deep-Dive with AI
Documents2SA1008 Data Sheet (D14866EJ2V0DS00)
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SA1008-AZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 1.5 W |
| Supplier Device Package | MP-25 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 13168 | $ 1.55 | |
Description
General part information
2SA1008 Series
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
Documents
Technical documentation and resources