Specification	CSD18533KCS

Current - Continuous Drain (Id) @ 25°C	100 A, 72 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	3025 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

CSD18533KCS Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Texas Instruments CSD18533Q5A	2750 pF	MOSFET (Metal Oxide)	20 V	2.3 V	4.5 V 10 V	60 V	3.2 W 116 W	36 nC	Surface Mount	8-PowerTDFN	5.9 mOhm	N-Channel	17 A 100 A	-55 °C	150 °C	8-VSONP (5x6)
Texas Instruments CSD18533Q5AT	2750 pF	MOSFET (Metal Oxide)	20 V	2.3 V	4.5 V 10 V	60 V	3.2 W 116 W	36 nC	Surface Mount	8-PowerTDFN	5.9 mOhm	N-Channel	17 A 100 A	-55 °C	150 °C	8-VSONP (5x6)
Texas Instruments CSD18533KCS	3025 pF	MOSFET (Metal Oxide)	20 V	2.3 V	4.5 V 10 V	60 V	192 W	34 nC	Through Hole	TO-220-3	6.3 mOhm	N-Channel	72 A 100 A	-55 °C	175 ░C	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources