Discrete Semiconductor Products
RD3T050CNTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 5A, 150DEG C, 29W
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Discrete Semiconductor Products
RD3T050CNTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 5A, 150DEG C, 29W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3T050CNTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 29 W |
| Rds On (Max) @ Id, Vgs | 760 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RD3T050CN Series
RD3T050CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources