Discrete Semiconductor Products

RJU60C6TDPP-EJ#T2

Obsolete

DIODE GP 600V 30A TO220FP-2L

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Discrete Semiconductor Products

Obsolete

DIODE GP 600V 30A TO220FP-2L

Technical Specifications

Parameters and characteristics for this part

Specification	RJU60C6TDPP-EJ#T2

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-2 Full Pack
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FP-2L
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Fast Recovery Diodes

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Mounting Type
Renesas Electronics Corporation RJU60C6TDPP-EJ#T2	30 A	600 V	150 °C	1 µA	200 mA 500 ns	Standard	2 V	TO-220-2 Full Pack	TO-220FP-2L	Through Hole
Renesas Electronics Corporation RJU60C6TDPP-EJ#T2	30 A	600 V	150 ¯C	1 µA	200 mA 500 ns	Standard	2 V	TO-220-2 Full Pack	TO-220FP-2L	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.

Technical documentation and resources