Isolators

TLP759F(D4STIT4J,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

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DocumentsTLP759F(D4STIT4J,F | Datasheet

Isolators

TLP759F(D4STIT4J,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Deep-Dive with AI

DocumentsTLP759F(D4STIT4J,F | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLP759F(D4STIT4J,F

Current - DC Forward (If) (Max) [Max]	25 mA
Current Transfer Ratio (Min)	20 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels [custom]	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 C
Output Type	Transistor with Base
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-DIP
Voltage - Forward (Vf) (Typ)	1.65 V

TLP759 Series

Part	Current Transfer Ratio (Min)	Supplier Device Package	Package / Case	Number of Channels [custom]	Current - DC Forward (If) (Max) [Max]	Voltage - Forward (Vf) (Typ)	Mounting Type	Output Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Current - Output / Channel	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP759F(D4IMF4,J,F	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC
Toshiba Semiconductor and Storage TLP759(D4-TP4,J,F)	20 %	8-SMD		1	25 mA	1.65 V	Surface Mount	Transistor with Base	100 °C	-55 C	DC	8 mA
Toshiba Semiconductor and Storage TLP759(IGM-LF5,J,F	25 %	8-SMD		1	25 mA	1.65 V	Surface Mount	Transistor with Base	100 °C	-55 C	DC	8 mA	75 %
Toshiba Semiconductor and Storage TLP759F(D4MBIMT4JF	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC
Toshiba Semiconductor and Storage TLP759F(D4-TP4,J,F	20 %	8-SMD		1	25 mA	1.65 V	Surface Mount	Transistor with Base	100 °C	-55 C	DC
Toshiba Semiconductor and Storage TLP759F(D4STIT4J,F	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC
Toshiba Semiconductor and Storage TLP759(FANUC1T1J,F	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC	8 mA
Toshiba Semiconductor and Storage TLP759F(D4MBIM,J,F	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC
Toshiba Semiconductor and Storage TLP759(D4-IGM,J,F)	25 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC	8 mA	75 %
Toshiba Semiconductor and Storage TLP759F(MATDIGMJ,F	20 %	8-DIP	8-DIP (0.300" 7.62mm)	1	25 mA	1.65 V	Through Hole	Transistor with Base	100 °C	-55 C	DC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

TLP759 Series

Optoisolator Transistor with Base Output 5000Vrms 1 Channel 8-DIP

Documents

Technical documentation and resources

TLP759F(D4STIT4J,F | Datasheet

Datasheet