Discrete Semiconductor Products

AIKW75N60CTE8188XKSA1

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IGBT 600V TO247-3

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Discrete Semiconductor Products

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IGBT 600V TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	AIKW75N60CTE8188XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	225 A
Gate Charge	470 nC
Grade	Automotive
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	428 W
Qualification	AEC-Q101
Supplier Device Package	PG-TO247-3-41
Switching Energy	2.5 mJ, 2 mJ
Td (on/off) @ 25°C	330 ns
Td (on/off) @ 25°C	33 ns
Test Condition	15 V, 400 V, 75 A, 5 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Grade	Mounting Type	Power - Max [Max]	Gate Charge	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Current - Collector (Ic) (Max) [Max]	Qualification	Vce(on) (Max) @ Vge, Ic	Test Condition	Supplier Device Package
Infineon Technologies AIKW75N60CTE8188XKSA1	330 ns	33 ns	600 V	2 mJ 2.5 mJ	Automotive	Through Hole	428 W	470 nC	TO-247-3	225 A	-40 C	175 °C	Trench Field Stop	80 A	AEC-Q101	2 V	5 Ohm 15 V 75 A 400 V	PG-TO247-3-41

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 600 V 80 A 428 W Through Hole PG-TO247-3-41

Technical documentation and resources