Specification	SSM6N15AFE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

SSM6N15 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-563(ES6)

Part	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	FET Feature
Toshiba Semiconductor and Storage SSM6N15AFE,LM	Surface Mount	SOT-563 SOT-666	30 V	ES6	1.5 V	MOSFET (Metal Oxide)	4 Ohm	100 mA	2 N-Channel (Dual)	13.5 pF	150 °C	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-563(ES6)

Technical documentation and resources