Discrete Semiconductor Products

BST52,115

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TRANS NPN DARL 80V 1A SOT89

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Discrete Semiconductor Products

Active

TRANS NPN DARL 80V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BST52,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max	1.3 W
Qualification	AEC-Q101
Vce Saturation (Max) @ Ib, Ic	1.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Frequency - Transition	Mounting Type	Grade	Qualification
Freescale Semiconductor - NXP BST52,115	TO-243AA	50 nA	1.3 V	80 V	1.3 W	2000	1 A	150 °C	200 MHz	Surface Mount	Automotive	AEC-Q101
Freescale Semiconductor - NXP BST52,135	TO-243AA	500 nA	1.3 V	80 V	1.3 W	2000	1 A	150 °C	200 MHz	Surface Mount	Automotive	AEC-Q101

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General part information

Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 200MHz 1.3 W Surface Mount SOT-89

Technical documentation and resources

No documents available