Discrete Semiconductor Products

2SD1949T106Q

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BIPOLAR TRANSISTORS - BJT NPN 50V 0.5A

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 50V 0.5A

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1949T106Q

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power - Max [Max]	200 mW
Supplier Device Package	UMT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Package / Case	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Supplier Device Package
Rohm Semiconductor 2SD1949T106R	180	250 MHz	SC-70 SOT-323	NPN	500 nA	400 mV	500 mA	150 °C	50 V	200 mW	Surface Mount	UMT3
Rohm Semiconductor 2SD1949T106Q	120	250 MHz	SC-70 SOT-323	NPN	500 nA	400 mV	500 mA	150 °C	50 V	200 mW	Surface Mount	UMT3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 500 mA 250MHz 200 mW Surface Mount UMT3

Technical documentation and resources

No documents available