Discrete Semiconductor Products

PJS6801_S1_00001

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30V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6801_S1_00001

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	633 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	74 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Configuration
Panjit International Inc. PJS6801_S1_00001	SOT-23-6	1.3 V	1.25 W	Surface Mount	SOT-23-6	150 °C	-55 °C	3.2 A	633 pF	15 nC	MOSFET (Metal Oxide)	74 mOhm	30 V	2 P-Channel (Dual)

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General part information

Mosfet Array 30V 3.2A (Ta) 1.25W (Ta) Surface Mount SOT-23-6

Technical documentation and resources