Specification	EMF5XV6T1G

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 80
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	357 mW
Resistor - Base (R1)	47 kOhms
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

EMF5XV6 Series

Complementary Bipolar Digital Transistor (BRT)

Part	Power - Max [Max]	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Resistor - Base (R1)	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case
ON Semiconductor EMF5XV6T1G	357 mW	100 mA 500 mA	12 V 50 V	80 270	SOT-563	47 kOhms	1 NPN 1 PNP	250 mV 250 mV	100 nA	500 nA	Surface Mount	SOT-563 SOT-666

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 0.11

General part information

This dual die device contains a Low Vce(sat) PNP Transistor and an electrically isolated NPN Transistor with a Monolithic Bias Resistor Network.

Technical documentation and resources