Discrete Semiconductor Products

VS-60EPS12-M3

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DIODE GP 1.2KV 60A TO247AC

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Discrete Semiconductor Products

Active

DIODE GP 1.2KV 60A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60EPS12-M3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified, TO-247AC-2L
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.09 V

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Speed [Min]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-60EPS12PBF	TO-247AC Modified TO-247AC-2L	1.09 V	Through Hole	-40 °C	150 °C	60 A	1.2 kV	TO-247-2	Standard	200 mA 500 ns	100 µA
Vishay General Semiconductor - Diodes Division VS-60EPS12-M3	TO-247AC Modified TO-247AC-2L	1.09 V	Through Hole	-40 °C	150 °C	60 A	1.2 kV	TO-247-2	Standard	200 mA 500 ns	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 60A Through Hole TO-247AC Modified

Technical documentation and resources