Discrete Semiconductor Products

SI3441BDV-T1-GE3

Obsolete

MOSFET P-CH 20V 2.45A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.45A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3441BDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.45 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	860 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

Part	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI3441BDV-T1-GE3	90 mOhm	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	850 mV	Surface Mount	2.5 V 4.5 V	MOSFET (Metal Oxide)	8 nC	8 V	20 V	P-Channel	2.45 A	860 mW	6-TSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.45A (Ta) 860mW (Ta) Surface Mount 6-TSOP

Technical documentation and resources

No documents available