Discrete Semiconductor Products

2SC2959-AZ

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Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

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Search across all available documentation for this part.

Documents2SC2958,2SC2959 Data Sheet

Discrete Semiconductor Products

2SC2959-AZ

Active

Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

Deep-Dive with AI

Documents2SC2958,2SC2959 Data Sheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2959-AZ

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	3-SSIP
Power - Max [Max]	1 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	160 V

2SC2959 Series

Bipolar Power Transistors

Part	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type
Renesas Electronics Corporation 2SC2959-AZ	1 W	60 MHz	100	500 mA	3-SSIP	150 °C	700 mV	160 V	200 nA	Through Hole	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	9651	$ 0.49

Description

General part information

2SC2959 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

2SC2958,2SC2959 Data Sheet

Datasheet