Zenode.ai Logo
Beta
ONSONSMBD54DWT1G
Discrete Semiconductor Products

FFB3904

Active
ON Semiconductor

DUAL NPN 40 V, 200 MA GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

ONSONSMBD54DWT1G
Discrete Semiconductor Products

FFB3904

Active
ON Semiconductor

DUAL NPN 40 V, 200 MA GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationFFB3904
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
Supplier Device PackageSC-88 (SC-70-6)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3806$ 0.08
3806$ 0.08

Description

General part information

FFB3946 Series

This complementary device is designed for use as a general-purpose amplifier and switch, The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.