Specification	55GN01CA-TB-E

Current - Collector (Ic) (Max) [Max]	70 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	4.5 GHz
Gain	9.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.9 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	3-CP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	10 V

55GN01MA Series

RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz

Part	Frequency - Transition	Transistor Type	Package / Case	Mounting Type	Operating Temperature	Gain	Voltage - Collector Emitter Breakdown (Max) [Max]	Noise Figure (dB Typ @ f)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition [Min]	Frequency - Transition [Max]	Gain [Min]	Gain [Max]
ON Semiconductor 55GN01CA-TB-E	4.5 GHz	NPN	SC-59 SOT-23-3 TO-236-3	Surface Mount	150 °C	9.5 dBi	10 V	1.9 dB	100	200 mW	70 mA	3-CP
ON Semiconductor 55GN01MA-TL-E		NPN	SC-70 SOT-323	Surface Mount	150 °C	10 dB	10 V	1.9 dB	100	400 mW	70 mA	3-MCP	4.5 GHz	5.5 GHz
ON Semiconductor 55GN01FA-TL-H		NPN	SC-81	Surface Mount	150 °C		10 V	1.9 dB	100	250 mW	70 mA	3-SSFP	4.5 GHz	5.5 GHz	11 dB	19 dB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

55GN01FA is RF Transistor, 10 V, 70 mA, fT= 5.5 GHz, NPN Single SSFP for UHF Wide-band Low-noise Amplifier Applications.