Discrete Semiconductor Products

PHP14NQ20T,127

Obsolete

MOSFET N-CH 200V 14A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 14A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP14NQ20T,127

Current - Continuous Drain (Id) (Tc)	14 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	125 W
Rds On (Max)	230 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Technology	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case
NXP USA Inc. PHP143NQ04T,127	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 °C	200 W	75 A	4 V	5.2 mOhm	10 V	2840 pF	52 nC	Through Hole	TO-220AB	20 V	40 V	TO-220-3
NXP USA Inc. PHP14NQ20T,127	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 °C	125 W	14 A	4 V	230 mOhm	10 V	1500 pF	38 nC	Through Hole	TO-220AB	20 V	200 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.04	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 14A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources