Discrete Semiconductor Products
DMN2008LFU-7
ActiveDiodes Inc
MOSFET, DUAL, N-CH, 20V, 14.5A ROHS COMPLIANT: YES
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Discrete Semiconductor Products
DMN2008LFU-7
ActiveDiodes Inc
MOSFET, DUAL, N-CH, 20V, 14.5A ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2008LFU-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) @ 25°C | 14.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 42.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1418 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm |
| Supplier Device Package | U-DFN2030-6 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMN2008LFU Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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Technical documentation and resources
