Specification	HUF75545S3ST

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	235 nC
Input Capacitance (Ciss) (Max) @ Vds	3750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	270 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75545S3S Series

N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Package / Case	Vgs (Max)
ON Semiconductor HUF75545S3ST	10 V	3750 pF	4 V	235 nC	MOSFET (Metal Oxide)	TO-263 (D2PAK)	80 V	N-Channel	75 A	Surface Mount	10 mOhm	-55 °C	175 ░C	270 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V
ON Semiconductor HUF75545P3	10 V	3750 pF	4 V	235 nC	MOSFET (Metal Oxide)	TO-220-3	80 V	N-Channel	75 A	Through Hole	10 mOhm	-55 °C	175 ░C	270 W	TO-220-3	20 V
ON Semiconductor HUF75545P3	10 V	3750 pF	4 V	235 nC	MOSFET (Metal Oxide)	TO-220-3	80 V	N-Channel	75 A	Through Hole	10 mOhm	-55 °C	175 ░C	270 W	TO-220-3	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel UltraFET Power MOSFET 80 V, 75 A, 10 mΩ

Technical documentation and resources