Discrete Semiconductor Products

FMBS5401

Obsolete

TRANS PNP 150V 0.6A SUPERSOT-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 150V 0.6A SUPERSOT-6

Technical Specifications

Parameters and characteristics for this part

Specification	FMBS5401

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Frequency - Transition	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FMBS5401	SuperSOT™-6	50 nA	150 V	60 hFE	500 mV	600 mA	SOT-23-6 Thin TSOT-23-6	700 mW	300 MHz	PNP	-55 °C	150 °C	Surface Mount
ON Semiconductor FMBS5551	SuperSOT™-6	50 nA		80	200 mV	600 mA	SOT-23-6 Thin TSOT-23-6	700 mW	300 MHz	NPN	-55 °C	150 °C	Surface Mount	160 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 700 mW Surface Mount SuperSOT™-6

Technical documentation and resources