Specification	RFD14N05LSM9A

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

RFD14N05LSM Series

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

Part	Mounting Type	Technology	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type
ON Semiconductor RFD14N05LSM9A	Surface Mount	MOSFET (Metal Oxide)	48 W	10 V	-55 °C	175 ░C	40 nC	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 V	5 V	TO-252AA	14 A	50 V	100 mOhm	N-Channel
ON Semiconductor RFD14N05L	Through Hole	MOSFET (Metal Oxide)	48 W	10 V	-55 °C	175 ░C	40 nC	670 pF	IPAK TO-251-3 Short Leads TO-251AA	2 V	5 V	IPAK	14 A	50 V	100 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.17
		10	$ 0.73
		100	$ 0.48
		500	$ 0.38
		1000	$ 0.34
	Digi-Reel®	1	$ 1.17
		10	$ 0.73
		100	$ 0.48
		500	$ 0.38
		1000	$ 0.34
	Tape & Reel (TR)	2500	$ 0.30
		5000	$ 0.28
		7500	$ 0.27
		12500	$ 0.26
Newark	Each (Supplied on Full Reel)	1	$ 0.36
		3000	$ 0.35
		6000	$ 0.32
		12000	$ 0.30
		18000	$ 0.28
		30000	$ 0.27
ON Semiconductor	N/A	1	$ 0.28

Description

General part information

RFD14N05LSM Series

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.