Discrete Semiconductor Products

IXTT140N10P

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DISC MOSFET N-CH STD-POLAR TO-268AA/ TUBE

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Discrete Semiconductor Products

Active

DISC MOSFET N-CH STD-POLAR TO-268AA/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT140N10P

Current - Continuous Drain (Id) @ 25°C	140 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Supplier Device Package	Vgs (Max)	Mounting Type	Package / Case
Littelfuse/Commercial Vehicle Products IXTT140N10P	5 V	4700 pF	100 V	-55 °C	175 ░C	600 W	140 A	11 mOhm	10 V 15 V	155 nC	N-Channel	MOSFET (Metal Oxide)	TO-268AA	20 V	Surface Mount	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA

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General part information

N-Channel 100 V 140A (Tc) 600W (Tc) Surface Mount TO-268AA

Technical documentation and resources