Discrete Semiconductor Products

PCDP1265G1_T0_00001

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TO-220AC, SIC

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Discrete Semiconductor Products

Active

TO-220AC, SIC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP1265G1_T0_00001

Capacitance @ Vr, F	452 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Speed	Package / Case	Supplier Device Package	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Panjit International Inc. PCDP1265G1_T0_00001	650 V	452 pF	0 ns	12 A	No Recovery Time	TO-220-2	TO-220AC	Through Hole	SiC (Silicon Carbide) Schottky	80 µA	175 ░C	-55 C

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General part information

Diode 650 V 12A Through Hole TO-220AC

Technical documentation and resources

No documents available