Discrete Semiconductor Products

IXTY26P10T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, P-CH, 100V, 26A, TO-252 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IXTY26P10T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, P-CH, 100V, 26A, TO-252 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY26P10T

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTY26P10T Series

DiscMSFT PChan-Trench Gate TO-252D

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package
Littelfuse/Commercial Vehicle Products IXTY26P10T	-55 °C	150 °C	15 V	90 mOhm	52 nC	10 V	P-Channel	Surface Mount	4.5 V	26 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 W	100 V	3820 pF	MOSFET (Metal Oxide)	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.99
		70	$ 3.16
		140	$ 2.71
		560	$ 2.41
		1050	$ 2.06
		2030	$ 1.94
		5040	$ 1.86
Newark	Each	1	$ 4.39
		10	$ 3.83
		25	$ 3.28
		50	$ 2.72
		100	$ 2.16
		500	$ 2.15
		1000	$ 1.94
		2500	$ 1.93

Description

General part information

IXTY26P10T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources