Zenode.ai Logo
Beta
TO-126
Discrete Semiconductor Products

BD681G

Active
ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

TO-126
Discrete Semiconductor Products

BD681G

Active
ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBD681G
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]750
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]40 W
Supplier Device PackageTO-126
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 1.30
10$ 0.82
100$ 0.54
500$ 0.42
1000$ 0.38
2000$ 0.35
5000$ 0.31
10000$ 0.29
ON SemiconductorN/A 1$ 0.43

Description

General part information

BD681(LEGACY%20FAIRCHILD) Series

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications.Replacement Active Part Number:BD681