Discrete Semiconductor Products

PUML1,115

Obsolete

TRANS NPN PREBIAS/NPN 6TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN PREBIAS/NPN 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PUML1,115

Current - Collector (Ic) (Max) [Max]	100 mA, 200 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	210 hFE, 30 hFE
Frequency - Transition	230 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	6-TSSOP
Transistor Type	1 NPN, 1 NPN Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV, 150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
Freescale Semiconductor - NXP PUML1,115	30 hFE 210 hFE	6-TSSOP	150 mV 250 mV	1 NPN 1 NPN Pre-Biased	300 mW	100 mA 200 mA	Surface Mount	6-TSSOP SC-88 SOT-363	50 V	10 kOhms	230 MHz	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V 100mA, 200mA 230MHz 300mW Surface Mount 6-TSSOP

Technical documentation and resources

No documents available