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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E030ATTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Rds On (Max) @ Id, Vgs | 91 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6E030 Series
P-Channel 30 V 3A (Ta) Surface Mount TSMT6 (SC-95)
Documents
Technical documentation and resources