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Discrete Semiconductor Products
RJS6004TDPP-EJ#T2
ObsoleteRenesas Electronics Corporation
DIODE SCHOTT 600V 10A TO220FP-2L
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Discrete Semiconductor Products
RJS6004TDPP-EJ#T2
ObsoleteRenesas Electronics Corporation
DIODE SCHOTT 600V 10A TO220FP-2L
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJS6004TDPP-EJ#T2 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 15 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220FP-2L |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RJS6004TDPP-EJ Series
We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.
Documents
Technical documentation and resources