Discrete Semiconductor Products

SICRB6650

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DIODE SIL CARBIDE 650V 6A D2PAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 6A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICRB6650

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	D2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Reverse Recovery Time (trr)	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology
SMC Diode Solutions SICRB6650	No Recovery Time	0 ns	Surface Mount	150 pF	175 ░C	-55 C	6 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	50 µA	650 V	1.8 V	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 6A Surface Mount D2PAK

Technical documentation and resources