Discrete Semiconductor Products

UF4001-E3/54

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DIODE GEN PURP 50V 1A DO204AL

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	UF4001-E3/54

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Speed
Vishay General Semiconductor - Diodes Division UF4001-E3/54	150 °C	-55 °C	Through Hole	10 µA	DO-204AL (DO-41)	17 pF	1 V	50 V	Standard	1 A	Axial DO-204AL DO-41	50 ns	200 mA 500 ns
Vishay General Semiconductor - Diodes Division UF4001-M3/54	150 °C	-55 °C	Through Hole	10 µA	DO-204AL (DO-41)	17 pF	1 V	50 V	Standard	1 A	Axial DO-204AL DO-41	50 ns	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources