Discrete Semiconductor Products

RJK03B8DPA-00#J53

Obsolete

MOSFET N-CH 30V 30A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03B8DPA-00#J53

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Renesas Electronics Corporation RJK03B8DPA-00#J53	N-Channel	28 W	Surface Mount	9 nC	MOSFET (Metal Oxide)	8-WPAK	9.3 mOhm	1330 pF	30 V	30 A	8-PowerWDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	541	$ 0.55

General part information

The RJK03B8DPA is a N Channel Power MOSFET.

Technical documentation and resources