Discrete Semiconductor Products

RJK0603DPN-A0#T2

Obsolete

N-CHANNEL MOSFET 60 V, 80 A, 5.2 MΩ

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOSFET 60 V, 80 A, 5.2 MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0603DPN-A0#T2

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

N-Channel Mosfet 60 V, 80 A, 5.2 MΩ

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation RJK0603DPN-A0#T2	TO-220-3	125 W	80 A	Through Hole	150 °C	60 V	20 V	5.2 mOhm	TO-220ABA	MOSFET (Metal Oxide)	57 nC	N-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources