Discrete Semiconductor Products

PSMN022-30PL,127

Obsolete

PSMN022-30PL - N-CHANNEL 30 V 22 MΩ LOGIC LEVEL MOSFET@EN-US TO-220 3-PIN

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Discrete Semiconductor Products

Obsolete

PSMN022-30PL - N-CHANNEL 30 V 22 MΩ LOGIC LEVEL MOSFET@EN-US TO-220 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN022-30PL,127

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	447 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN022-30PL,127	22 mOhm	4.5 V 10 V	20 V	TO-220-3	9 nC	2.15 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	447 pF	TO-220AB	Through Hole	41 W	30 A	30 V

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General part information

N-Channel 30 V 30A (Tc) 41W (Tc) Through Hole TO-220AB

Technical documentation and resources