Specification	MMBT489LT1G

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

MMBT489 Series

High Current NPN Bipolar Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MMBT489LT1G	-55 °C	150 °C	300 hFE	100 MHz	SC-59 SOT-23-3 TO-236-3	30 V	100 nA	200 mV	SOT-23-3 (TO-236)	NPN	Surface Mount	1 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The High Current NPN Bipolar Transistor is designed for Load Management in Portable Applications.

Technical documentation and resources