Discrete Semiconductor Products

PDTC143XS,126

Obsolete

TRANS PREBIAS NPN 50V TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PDTC143XS,126

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Resistors Included	Package / Case	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PDTC143ZEF,115	47000 Ohms	R1 and R2	SC-89 SOT-490	250 mW	Surface Mount	100 mA	50 V	100 mV	100	4.7 kOhms	NPN - Pre-Biased	1 µA	SC-89
Freescale Semiconductor - NXP PDTC143XS,126	10 kOhms		TO-226-3 TO-92-3	500 mW	Through Hole	100 mA	50 V		50	4.7 kOhms	NPN - Pre-Biased	1 µA	TO-92-3	100 mV
Freescale Semiconductor - NXP PDTC143TE,115			SC-75 SOT-416	150 mW	Surface Mount	100 mA	50 V	100 mV	200	4.7 kOhms	NPN - Pre-Biased	1 µA	SC-75
Freescale Semiconductor - NXP PDTC143ES,126	4700 Ohms		TO-226-3 TO-92-3	500 mW	Through Hole	100 mA	50 V		30	4.7 kOhms	NPN - Pre-Biased	1 µA	TO-92-3	150 mV
Freescale Semiconductor - NXP PDTC143ZK,115	47000 Ohms		SC-59 SOT-23-3 TO-236-3	250 mW	Surface Mount	100 mA	50 V	100 mV	100	4.7 kOhms	NPN - Pre-Biased	1 µA	MPAK SMT3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3

Technical documentation and resources