Discrete Semiconductor Products

SIHK085N60EF-T1GE3

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EF SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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EF SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHK085N60EF-T1GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2733 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerBSFN
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	PowerPAK®10 x 12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SIHK085N60EF-T1GE3	8-PowerBSFN	2733 pF	N-Channel	MOSFET (Metal Oxide)	5 V	30 V	30 A	PowerPAK®10 x 12	10 V	-55 °C	150 °C	600 V	63 nC	85 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 30A (Tc) 184W (Tc) Surface Mount PowerPAK®10 x 12

Technical documentation and resources