Discrete Semiconductor Products

SI4534DY-T1-GE3

LTB

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

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Discrete Semiconductor Products

LTB

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4534DY-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A, 4.1 A, 8 A, 6.2 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	420 pF, 650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	3.6 W, 2 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Configuration	Mounting Type	Power - Max	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4534DY-T1-GE3	3 V	22 nC	11 nC	MOSFET (Metal Oxide)	8-SOIC	N and P-Channel	Surface Mount	2 W 3.6 W	60 V	8-SOIC	3.9 mm	0.154 in	3 A 4.1 A 6.2 A 8 A	420 pF 650 pF	-55 °C	150 °C

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General part information

Mosfet Array 60V 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 8-SOIC

Technical documentation and resources