
Integrated Circuits (ICs)
IS62WV51216EALL-55BLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 8MB, LOW POWER/POWER SAVER,ASYNC,512K X 16,55NS,1.65V-2.2V,48 BALL MBGA (6X8 MM), ROHS
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Integrated Circuits (ICs)
IS62WV51216EALL-55BLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 8MB, LOW POWER/POWER SAVER,ASYNC,512K X 16,55NS,1.65V-2.2V,48 BALL MBGA (6X8 MM), ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS62WV51216EALL-55BLI |
|---|---|
| Access Time | 55 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 512K x 16 |
| Memory Size | 1024 KB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 48-VFBGA |
| Supplier Device Package | 48-VFBGA (6x8) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 2.2 V |
| Voltage - Supply [Min] | 1.65 V |
| Write Cycle Time - Word, Page | 55 ns |
| Part | Access Time | Memory Organization | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Technology | Mounting Type | Memory Size | Memory Format | Memory Interface | Supplier Device Package | Memory Type | Write Cycle Time - Word, Page | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 45 ns | 512K x 16 | 3.6 V | 2.2 V | 85 C | -40 ¯C | 48-VFBGA | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-VFBGA (6x8) | Volatile | 55 ns | ||||
ISSI, Integrated Silicon Solution Inc | 45 ns | 512K x 16 | 3.6 V | 2.2 V | 85 C | -40 ¯C | 44-TSOP (0.400" 10.16mm Width) | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 44-TSOP II | Volatile | 45 ns | 45 ns | |||
ISSI, Integrated Silicon Solution Inc | 45 ns | 512K x 16 | 3.6 V | 2.2 V | 85 C | -40 ¯C | 48-TFSOP | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-TSOP I | Volatile | 45 ns | 45 ns | 18.4 mm | 0.724 in | |
ISSI, Integrated Silicon Solution Inc | 55 ns | 512K x 16 | 3.6 V | 2.5 V | 85 C | -40 ¯C | 48-TFBGA | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-TFBGA (6x8) | Volatile | 55 ns | ||||
ISSI, Integrated Silicon Solution Inc | 55 ns | 512K x 16 | 3.6 V | 2.5 V | 85 C | -40 ¯C | 44-TSOP (0.400" 10.16mm Width) | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 44-TSOP II | Volatile | 55 ns | ||||
ISSI, Integrated Silicon Solution Inc | 55 ns | 512K x 16 | 2.2 V | 1.65 V | 85 C | -40 ¯C | 48-VFBGA | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-VFBGA (6x8) | Volatile | 55 ns | ||||
ISSI, Integrated Silicon Solution Inc | 45 ns | 512K x 16 | 3.6 V | 2.2 V | 85 C | -40 ¯C | 48-VFBGA | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-VFBGA (6x8) | Volatile | 45 ns | 45 ns | |||
ISSI, Integrated Silicon Solution Inc | 55 ns | 512K x 16 | 2.2 V | 1.65 V | 85 C | -40 ¯C | 48-VFBGA | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-VFBGA (6x8) | Volatile | 55 ns | ||||
ISSI, Integrated Silicon Solution Inc | 45 ns | 512K x 16 | 3.6 V | 2.2 V | 85 C | -40 ¯C | 48-TFSOP | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 48-TSOP I | Volatile | 45 ns | 45 ns | 18.4 mm | 0.724 in | |
ISSI, Integrated Silicon Solution Inc | 55 ns | 512K x 16 | 2.2 V | 1.65 V | 85 C | -40 ¯C | 44-TSOP (0.400" 10.16mm Width) | SRAM - Asynchronous | Surface Mount | 1024 KB | SRAM | Parallel | 44-TSOP II | Volatile | 55 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS62WV51216 Series
SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 48-VFBGA (6x8)
Documents
Technical documentation and resources
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