Discrete Semiconductor Products

MMSF3P02HDR2SG

Obsolete

MOSFET P-CH 20V 5.6A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 5.6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	MMSF3P02HDR2SG

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor MMSF3P02HDR2SG	8-SOIC	2.5 W	46 nC	P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	4.5 V 10 V	1400 pF	5.6 A	2 V	75 mOhm	20 V	Surface Mount	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available