Discrete Semiconductor Products

GA10SICP12-263

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TRANS SJT 1200V 25A D2PAK

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Discrete Semiconductor Products

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TRANS SJT 1200V 25A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	GA10SICP12-263

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1.2 kV
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	170 W
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Technology	Operating Temperature
GeneSiC Semiconductor GA10SICP12-263	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	25 A	1.2 kV	Surface Mount	TO-263-7	170 W	SiC (Silicon Carbide Junction Transistor)	175 °C

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General part information

1200 V 25A (Tc) 170W (Tc) Surface Mount TO-263-7

Technical documentation and resources