Specification	NTMFD1D4N02P1E

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	24 A, 155 A, 74 A, 13 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	7.2 nC
Gate Charge (Qg) (Max) @ Vgs	21.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1180 pF, 3603 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	960 mW
Power - Max	1 W
Rds On (Max) @ Id, Vgs	3.3 mOhm, 1.1 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V, 2 V

NTMFD1D4N02P1E Series

MOSFET, Power, 25V Dual N-Channel Power Clip

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMFD1D4N02P1E	-55 °C	150 °C	2 N-Channel (Dual) Asymmetrical	1.1 mOhm 3.3 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 V 2 V	8-PQFN (5x6)	8-PowerWDFN	25 V	1180 pF 3603 pF	960 mW	1 W	7.2 nC	21.5 nC	13 A 24 A 74 A 155 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, Dual 25V N-Channel, Power Clip, Asymmetric, 3.3mΩ HS, 1.1mΩ LS, PQFN8 5x6mm