Discrete Semiconductor Products

FGA70N33BTDTU

Obsolete

IGBT 330V 149W TO3P

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Discrete Semiconductor Products

Obsolete

IGBT 330V 149W TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	FGA70N33BTDTU

Current - Collector Pulsed (Icm)	220 A
Gate Charge	49 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	149 W
Reverse Recovery Time (trr)	23 ns
Supplier Device Package	TO-3P
Voltage - Collector Emitter Breakdown (Max) [Max]	330 V

Part	IGBT Type	Mounting Type	Power - Max [Max]	Gate Charge	Package / Case	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGA70N33BTDTU	Trench	Through Hole	149 W	49 nC	SC-65-3 TO-3P-3	23 ns	220 A	-55 °C	150 °C	TO-3P	330 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench 330 V 149 W Through Hole TO-3P

Technical documentation and resources