Discrete Semiconductor Products

SI7884BDP-T1-E3

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MOSFET N-CH 40V 58A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 58A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7884BDP-T1-E3

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	3540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	46 W, 4.6 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Package / Case	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SI7884BDP-T1-E3	N-Channel	3540 pF	3 V	58 A	7.5 mOhm	77 nC	-55 °C	150 °C	4.5 V 10 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	PowerPAK® SO-8	4.6 W 46 W	20 V	40 V	Surface Mount

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General part information

N-Channel 40 V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources