Discrete Semiconductor Products

S4PMHM3_B/I

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DIODE GEN PURP 1KV 4A TO277A

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 4A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	S4PMHM3_B/I

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 çA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Reverse Recovery Time (trr)	2.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-277A (SMPC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Technology	Capacitance @ Vr, F	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Qualification	Current - Average Rectified (Io)	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division S4PMHM3_B/I	TO-277A (SMPC)	2.5 µs	Surface Mount	Standard	30 pF	Standard Recovery >500ns	200 mA	1.1 V	AEC-Q101	4 A	Automotive	150 °C	-55 °C	10 çA	3-PowerDFN TO-277	1000 V
Vishay General Semiconductor - Diodes Division S4PMHM3_B/H	TO-277A (SMPC)	2.5 µs	Surface Mount	Standard	30 pF	Standard Recovery >500ns	200 mA	1.1 V	AEC-Q101	4 A	Automotive	150 °C	-55 °C	10 çA	3-PowerDFN TO-277	1000 V

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General part information

Diode 1000 V 4A Surface Mount TO-277A (SMPC)

Technical documentation and resources