Discrete Semiconductor Products

NTMFSC1D0N04HL

Obsolete

ON Semiconductor

POWER MOSFET , SINGLE N-CHANNEL, 40V / 1.0 MΩ, 288A, DUALCOOL 56

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Discrete Semiconductor Products

NTMFSC1D0N04HL

Obsolete

ON Semiconductor

POWER MOSFET , SINGLE N-CHANNEL, 40V / 1.0 MΩ, 288A, DUALCOOL 56

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFSC1D0N04HL

Current - Continuous Drain (Id) @ 25°C	288 A, 43 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	5960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	166 W, 3.8 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	8-DFN (5x6.15)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMFSC1D0N04HL Series

Power MOSFET , Single N-Channel, 40V / 1.0 mΩ, 288A, DualCool 56

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)
ON Semiconductor NTMFSC1D0N04HL	93 nC	2 V	20 V	N-Channel	4.5 V 10 V	-55 °C	175 ░C	8-DFN (5x6.15)	Surface Mount	43 A 288 A	3.8 W 166 W	5960 pF	MOSFET (Metal Oxide)	1 mOhm	8-PowerVDFN	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTMFSC1D0N04HL Series

High performance Power MOSFET with advanced dual-side cooling package technology. Lower On-resistance to improve the condition loss and smaller junction capacitance to improve the switching loss. Specific to apply high switching frequency DC to DC conversion application.

Documents

Technical documentation and resources