Specification	MCH6661-TL-W

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds	88 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	188 mOhm
Supplier Device Package	SC-88FL/MCPH6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

MCH6661 Series

Dual N-Channel Power MOSFET, 30V, 1.8A, 188mΩ

Part	Vgs(th) (Max) @ Id	FET Feature	Mounting Type	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor MCH6661-TL-W	2.6 V	4V Drive Logic Level Gate	Surface Mount	800 mW	1.8 A	SC-88FL/MCPH6	2 N-Channel (Dual)	6-TSSOP SC-88 SOT-363	88 pF	188 mOhm	150 °C	MOSFET (Metal Oxide)	2 nC	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MCH6661 is N-Channel Power MOSFET, 30V, 1.8A, 188mΩ, Dual MCPH6.

Technical documentation and resources