Discrete Semiconductor Products

SQJA70EP-T1_GE3

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MOSFET N-CH 100V 14.7A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 100V 14.7A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJA70EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	14.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	27 W
Qualification	AEC-Q101
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Qualification	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Vgs(th) (Max) @ Id	Grade	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
Vishay General Semiconductor - Diodes Division SQJA70EP-T1_GE3	MOSFET (Metal Oxide)	100 V	14.7 A	Surface Mount	-55 °C	175 ░C	27 W	AEC-Q101	7 nC	PowerPAK® SO-8	N-Channel	3.5 V	Automotive	10 V	PowerPAK® SO-8	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 14.7A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources