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TO-126
Discrete Semiconductor Products

MJE371

Obsolete
ON Semiconductor

4.0 A, 40 V PNP BIPOLAR POWER TRANSISTOR

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TO-126
Discrete Semiconductor Products

MJE371

Obsolete
ON Semiconductor

4.0 A, 40 V PNP BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE371
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]40 W
Supplier Device PackageTO-126
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJE371 Series

The PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.