Discrete Semiconductor Products

RFD4N06LSM9A

Obsolete

MOSFET N-CH 60V 4A TO252AA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 4A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	RFD4N06LSM9A

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case
ON Semiconductor RFD4N06LSM9A	N-Channel	MOSFET (Metal Oxide)	4 A	2.5 V	-55 °C	175 ░C	10 V	TO-252AA	60 V	5 V	600 mOhm	8 nC	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor RFD4N06LSM9A	N-Channel	MOSFET (Metal Oxide)	4 A	2.5 V	-55 °C	175 ░C	10 V	TO-252 (DPAK)	60 V	5 V	600 mOhm	8 nC	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 4A (Tc) 30W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources