Specification	NVTYS005N04CTWG

Current - Continuous Drain (Id) @ 25°C	18 A, 71 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.1 W, 50 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTYS005N04C Series

MOSFET – Power, Single, N-Channel

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVTYS005N04CTWG	N-Channel	3.5 V	1000 pF	8-LFPAK	3.1 W 50 W	AEC-Q101	Automotive	16 nC	8-LFPAK56 SOT-1205	10 V	MOSFET (Metal Oxide)	20 V	5.6 mOhm	18 A 71 A	Surface Mount	40 V	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 5.6 mΩ, 71 A

Technical documentation and resources